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Datasheet VOW3120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | VOW3120 | Widebody 2.5 A IGBT and MOSFET Driver www.vishay.com
VOW3120
Vishay Semiconductors
Widebody 2.5 A IGBT and MOSFET Driver
NC 1 A2 C3
NC 4
Shield
8 VCC 7 VO 6 NC 5 VEE
DVE
FEATURES • 2.5 A minimum peak output current • 10 mm minimum external creepage distance • 50 kV/μs (typ.) common mode rejection • ICC = 2.5 mA maximum su | Vishay | igbt |
VOW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | VOW135 | High Speed Optocoupler www.vishay.com
VOW135, VOW136
Vishay Semiconductors
Widebody, High Isolation, High Speed Optocoupler, 1 MBd
NC 1 A2 C3
NC 4
8 C (VCC) 7 B (VB) 6 C (VO) 5 E (GND)
22660
DESCRIPTION
1 MBd widebody optocouplers consist of a GaAlAs infrared emitting diode, optically coupled with an integrated photo Vishay data | | |
2 | VOW136 | High Speed Optocoupler www.vishay.com
VOW135, VOW136
Vishay Semiconductors
Widebody, High Isolation, High Speed Optocoupler, 1 MBd
NC 1 A2 C3
NC 4
8 C (VCC) 7 B (VB) 6 C (VO) 5 E (GND)
22660
DESCRIPTION
1 MBd widebody optocouplers consist of a GaAlAs infrared emitting diode, optically coupled with an integrated photo Vishay data | | |
3 | VOW137 | High Speed Optocoupler www.vishay.com
VOW137, VOW2611
Vishay Semiconductors
Widebody, High Isolation, High Speed Optocoupler, 10 MBd
NC 1 A2 C3
NC 4
8 VCC 7 VE 6 V0 5 GND
22660
DESCRIPTION Both 10 MBd widebody optocouplers consist of a GaAlAs infrared emitting diode, optically coupled with an integrated photo detecto Vishay data | | |
4 | VOW2611 | High Speed Optocoupler www.vishay.com
VOW137, VOW2611
Vishay Semiconductors
Widebody, High Isolation, High Speed Optocoupler, 10 MBd
NC 1 A2 C3
NC 4
8 VCC 7 VE 6 V0 5 GND
22660
DESCRIPTION Both 10 MBd widebody optocouplers consist of a GaAlAs infrared emitting diode, optically coupled with an integrated photo detecto Vishay data | | |
5 | VOW3120 | Widebody 2.5 A IGBT and MOSFET Driver www.vishay.com
VOW3120
Vishay Semiconductors
Widebody 2.5 A IGBT and MOSFET Driver
NC 1 A2 C3
NC 4
Shield
8 VCC 7 VO 6 NC 5 VEE
DVE
FEATURES • 2.5 A minimum peak output current • 10 mm minimum external creepage distance • 50 kV/μs (typ.) common mode rejection • ICC = 2.5 mA maximum su Vishay igbt | |
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Número de pieza | Descripción | Fabricantes | |
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