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Datasheet TSF8N60M Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TSF8N60M   600V N-Channel MOSFET

TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar str
 Truesemi
Truesemi		 datasheet TSF8N60M pdf

TSF8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TSF8N60M

600V N-Channel MOSFET

TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s
 Truesemi
Truesemi		 datasheet pdf - Truesemi
TSF8N65M

N-Channel MOSFET

TSP8N65M / TSF8N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, a
 Truesemi
Truesemi		 datasheet pdf - Truesemi
TSF8N65C

7.5A 650V Insulated N-Channel Type Power MOSFETs

TSF8N65C ® TSF8N65C Pb Pb Free Plating Product 7.5A,650V Insulated N-Channel Type Power MOSFETs Features ■ High ruggedness ■ RDS(on) (Max 1.0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate{ { 2. Drain { �
 Thinki Semiconductor
Thinki Semiconductor		 datasheet pdf - Thinki Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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