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Datasheet TPT5609 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | TPT5609 | NPN Transistor TPT5609
TPT5609 TRANSISTOR (NPN)
FEATURES Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1 Collector-base voltage
A
V(BR)CBO: 25 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
123
ELECTRICAL CHARACTERIS |
 WEJ |
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| 2 | TPT5609 | NPN SILICON TRANSISTOR TPT5609
NPN SILICON TRANSISTOR
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 TP |
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| 1 | TPT5609 | NPN Epitaxial Silicon Transistor MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Excellent linearity of Current Gain x Low saturation voltage • Halogen free available upon request by adding suffix "-HF"
TPT5609
NPN |
 MCC |
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