No | Part number | Description ( Function ) | Manufacturers | |
3 | TIM1414-4LA | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB |
Toshiba Semiconductor |
|
2 | TIM1414-4LA | Microwave Power GaAs FET MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz TIM1414-4LA P reliminaly n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1d |
Toshiba |
|
1 | TIM1414-4LA-371 | Microwave Power GaAs FET DataShee DataSheet DataSheet DataSheet DataSheet 4 U .com et DataSheet DataSheet DataSheet DataSheet 4 U .com |
Toshiba |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |