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Datasheet TGA1135B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | TGA1135B | 18-27.5 GHz 1W Power Amplifier Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode
Chip |
 TriQuint Semiconductor |
 |
| 1 | TGA1135B-SCC | 18-27 GHz 1W Power Amplifier Product Datasheet
February 14, 2008
18-27 GHz 1W Power Amplifier
Key Features
• • • • • • •
TGA1135B-SCC
0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 540 mA On-chip power detector diode
Chip Di |
TriQuint Semiconductor |
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