No | Part number | Description ( Function ) | Manufacturers | |
2 | RJP30E2DPK-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: |
Renesas |
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1 | RJP30E2DPP-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Outline RENESAS Package cod |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |