Datasheet RJK5012DPP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	RJK5012DPP	Silicon N Channel MOS FET High Speed Power Switching RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. S	Renesas Technology	data
2	RJK5012DPP-E0	MOS FET Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PR	Renesas	data

RJK Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	RJK005N03	Drive Nch MOS FET RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switc	ROHM Semiconductor	data
2	RJK005N03FRA	Nch 30V 500mA Small Signal MOSFET RJK005N03FRA 　　Nch 30V 500mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 580mΩ ±500mA 200mW lFeatures 1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-346 SC-59 SMT3 　　　　　　　　 lInner circuit 　　 Datasheet 　 lApplic	ROHM Semiconductor	mosfet
3	RJK0204DPA	Silicon N Channel Power MOS FET Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m	Renesas Technology	data
4	RJK0206DPA	Silicon N Channel Power MOS FET Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m	Renesas Technology	data
5	RJK0208DPA	Silicon N Channel Power MOS FET Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m	Renesas Technology	data
6	RJK0210DPA	Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free REJ03G19	Renesas Technology	data
7	RJK0211DPA	Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet RJK0211DPA Silicon N Channel Power MOS FET Power Switching Features      Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free REJ03G19	Renesas Technology	data

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Número de pieza	Descripción	Fabricantes	PDF
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