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Datasheet RJK5010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 29 | RJK5002DJE | High Speed Power Switching MOS FET RJK5002DJE
500V - 2.4A - MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Sym |
 Renesas Technology |
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| 28 | RJK5003DPD | Silicon N Channel Power MOS FET
RJK5003DPD
Silicon N Channel Power MOS FET High Speed Power Switching Use
REJ03G0580-0200 Rev.2.00 Mar 14, 2006
Features
• • • • VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A (Package name : MP-3 |
Renesas Technology |
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| 27 | RJK5009DPP | Silicon N Channel Power MOS FET
RJK5009DPP
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1606-0100 Rev.1.00 Dec 04, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
D
G
1. Gate 2. Drain 3. S |
Renesas Technology |
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| 26 | RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet
RJK5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
Outline
R |
Renesas Technology |
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