Datasheet RJH30H2DPK-M0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJH30H2DPK-M0	High Speed Power Switching Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak	Renesas

RJH30H2DPK Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJH30H2DPK-M0	High Speed Power Switching Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf =	Renesas

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