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Datasheet MTP3055V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTP3055V | N-Channel Enhancement Mode Field Effect Transistor MTP3055V
May 1999
MTP3055V
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower g |  Fairchild Semiconductor | transistor |
| 2 | MTP3055V | Power MOSFET, Transistor MTP3055V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devic |  ON Semiconductor | mosfet |
| 3 | MTP3055VL | N-Channel Logic Level Enhancement Mode Field Effect Transistor MTP3055VL
June 2000 DISTRIBUTION GROUP*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
Th | Fairchild Semiconductor | transistor |
| 4 | MTP3055VL | Power MOSFET, Transistor MTP3055VL
Preferred Device
Power MOSFET 12 Amps, 60 Volts, Logic Level
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor control | ON Semiconductor | mosfet |
MTP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTP1013C3 | -20V P-CHANNEL Enhancement Mode MOSFET CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2012.10.05 Page No. : 1/ 8
MTP1013C3
Features
BVDSS ID RDSON@VGS=-4.5V, ID=-500mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA
-20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1  CYStech Electronics mosfet | | |
| 2 | MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
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 Motorola Semiconductors mosfet | | |
| 3 | MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
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Motorola Semiconductors mosfet | | |
| 4 | MTP10N08 | (MTP10N08 / MTP10N10) N-Channel Power MOSFETs ( )
Fairchild Semiconductor mosfet | | |
| 5 | MTP10N08 | (MTP10N08 / MTP10N10) Power Field Effect Transistor ( )
 Motorola Semiconductor transistor | | |
| 6 | MTP10N08 | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor mosfet | | |
| 7 | MTP10N08L | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor mosfet | |
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