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Datasheet MJ15001 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MJ15001 | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) — 2 | Motorola Semiconductors | transistor |
2 | MJ15001 | Complementary Silicon Power Transistors MJ15001 (NPN), MJ15002 (PNP)
Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area • For Low Distortion Complementary Designs • High DC Curre | ON | transistor |
3 | MJ15001 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15001
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DESCRIPTION ·With TO-3 package ·Complement to type MJ15002 ·Wide area of safe operation APPLICATIONS ·For high power audio,disk head positioners and other linear applications PINNING(see F | SavantIC | transistor |
4 | MJ15001G | Complementary Silicon Power Transistors MJ15001 (NPN), MJ15002 (PNP)
Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area • For Low Distortion Complementary Designs • High DC Curre | ON Semiconductor | transistor |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi Motorola Inc transistor | | |
2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
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DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli SavantIC transistor | | |
3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the Comset Semiconductors data | | |
4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor data | | |
5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
Mospec Semiconductor transistor | | |
6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc transistor | | |
7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
Wing Shing Computer Components transistor | |
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