No | Part number | Description ( Function ) | Manufacturers | |
1 | MDS3604 | Single P-Channel Trench MOSFET MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Feature |
MagnaChip |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
1N3604 | (1N3xxx) Silicon Diodes Silicon Diodes DO-35 Case Switching Diodes TYPE NO. VRRM (V) MAX 100 100 75 75 75 75 50 40 75 100 50 75 40 75 35 70 100 100 100 100 75 50 80 IO (mA) MAX 150 150 75 75 75 75 200 150 150 150 200 150 150 150 150 200 150 150 150 150 150 200 200 VF (V) MAX 1.0 1.0 1.0 0.85 1.0 1.0 1.0 |
Central |
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23HS3604-02 | Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number 23HS0402-02 23HS0403-02 23HS0404-01 23HS0406 23HS0411 23HS0412 23HS0413 23HS1407 23HS1408 23HS2403 23 |
ETC |
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2SC3604 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide |
NEC |
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2SC3604 | NPN EPITAXIAL SILICON TRANSISTOR Free Datasheet http:/// Free Datasheet http:/// |
New Jersey Semi-Conductor |
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2SC3604 | Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X |
New Jersey Semiconductor |
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