No | Part number | Description ( Function ) | Manufacturers | |
1 | M28F101 | 1 Mb FLASH MEMORY M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufact |
STMicroelectronics |
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Recommended search results related to M28F101 |
Part No | Description ( Function) | Manufacturers | |
M28F102 | 1 Mbit Flash Memory datasheet39.com M28F102 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/P |
STMicroelectronics |
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SU1028101YFx-xxx | (SU1028xxxxFx-xxx) SHIELDED SMD POWER INDUCTOR SPECIFICATION FOR APPROVAL REF : 20080805-B PROD. NAME PAGE: 1 ABC'S DWG NO. ABC'S ITEM NO. SU1028□□□□F□-□□□ SHIELDED SMD POWER INDUCTOR Ⅰ﹒CONFIGURATION & DIMENSIONS: A A B : 10.0 ±0.3 : 10.0 ±0.3 2.8 ±0.3 3.4 typ. 3.2 typ. 7.4 typ. 4.0 ref. 7.2 ref. 1. |
ABC Taiwan Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |