No | Part number | Description ( Function ) | Manufacturers | |
1 | K8A50D | TK8A50D TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absol |
Toshiba |
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Recommended search results related to K8A50D |
Part No | Description ( Function) | Manufacturers | |
TK8A50D | Field Effect Transistor TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 |
Toshiba |
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TK8A50DA | Field Effect Transistor TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.) Low leakage current: IDS |
Toshiba Semiconductor |
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1468505 | Bobbin Type Inductors |
C&D Technologies |
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1468505 | Bobbin Type Inductors |
C&D Technologies |
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1468505C | Bobbin Type Inductors www.murata-ps.com 1400 Series Bobbin Type Inductors FEATURES n RoHS compliant n Radial format n -40°C to 85°C operating temperature n Up to 13A IDC n 10μH to 22mH n Low DC resistance n Fully tinned leads n PCB mounting hole n Low temperature dependence n Backward compatible |
Murata |
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Vishay |
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