No | Part number | Description ( Function ) | Manufacturers | |
1 | K2800 | MOSFET ( Transistor ) - 2SK2800 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Rat |
Hitachi Semiconductor |
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Recommended search results related to K2800 |
Part No | Description ( Function) | Manufacturers | |
2SK2800 | Silicon N Channel MOS FET High Speed Power Switching 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D |
Hitachi Semiconductor |
|
006200-167022800 | 6200 Series / Surface Mount w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c |
Kyocera |
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006200167022800 | 6200 Series / Surface Mount w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c |
Kyocera |
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1N2800 | (1N2xxx) SILICON POWER RECTIFIER |
Microsemi Corporation |
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1N2800 | Diode 400V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |