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Datasheet K13A60D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K13A60D   TK13A60D

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V)
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet K13A60D pdf

K13A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K13A60D

TK13A60D

TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
K13A65U

TK13A65U

TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK13A65U Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
K13A25D

TK13A25D

MOSFETs Silicon N-Channel MOS (π-MOS) TK13A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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