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Datasheet K13A600 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K13A60D | TK13A60D TK13A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A60D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) |
 Toshiba Semiconductor |
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| 1 | K13A65U | TK13A65U TK13A65U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK13A65U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS |
Toshiba Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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