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Datasheet K10A600 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K10A60D | 600V, 10A, Silicon N Channel MOSFET, TK10A60D
TK10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK10A60D
Switching Regulator Applications
Unit: mm
• • • •
Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage cu |
 Toshiba |
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| 1 | K10A60W | TK10A60W Preliminary
TK10A60W
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK10A60W
Switching Regulator Applications
• Low drain-source on-resistance : RDS (ON) = 0.327 by used to Super Junction Structure : DTMOS
(typ.)
• Easy to control Gate switching
• Enhancement-mode: |
 Toshiba Semiconductor |
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