No | Part number | Description ( Function ) | Manufacturers | |
2 | IRGP6630D-EPbF | Insulated Gate Bipolar Transistor VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF TO‐247AC C Collector GCE IRGP6630D‐EPbF TO‐247AD E Emi |
International Rectifier |
|
1 | IRGP6630DPbF | Insulated Gate Bipolar Transistor VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF TO‐247AC C Collector GCE IRGP6630D‐EPbF TO‐247AD E Emi |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |