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Datasheet IRG4PC50U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4PC50U | 600V, 55A, INSULATED GATE BIPOLAR TRANSISTOR PD 91470F
IRG4PC50U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan |
 IRF |
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| 3 | IRG4PC50UD | INSULATED GATE BIPOLAR TRANSISTOR PD 91471B
IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
IRF |
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| 2 | IRG4PC50UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficie |
 International Rectifier |
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| 1 | IRG4PC50UPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95186
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UPbF
UltraFast Speed IGBT
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Gene |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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