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Datasheet IRFP460 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 22 | IRFP460 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP460
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.27Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mo |
 Inchange Semiconductor |
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| 21 | IRFP460 | 20A, 500V, Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFP460
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.)
Absolute Maximum Ra |
 Fairchild Semiconductor |
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| 20 | IRFP460 | 20A, 500V, Power MOSFET |
 International Rectifier |
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| 19 | IRFP460 | 500V, 20A, N-Channel Power MOSFET IRFP460
Data Sheet July 1999 File Number
2291.3
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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