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Datasheet IRFP250N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFP250N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250N
FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.075Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mod |
 Inchange Semiconductor |
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| 2 | IRFP250N | Power MOSFET ( Transistor ) PD - 94008A
IRFP250N
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements
D
VDSS = 200V
RDS(on) = 0.075Ω
G
ID = 30A
S
Description
Fifth Generation HEX |
 IRF |
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| 1 | IRFP250NPBF | Power MOSFET ( Transistor ) PD - 95007A
IRFP250NPbF
l l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFET
D
VDSS = 200V RDS(on) = 0.075Ω
G S
ID = 30A
Description
Fi |
IRF |
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