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Datasheet HL6335G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HL6335G | (HL6336G) Circular Beam Low Operating Current HL6335G/36G
Circular Beam Low Operating Current
ADE-208-1419C (Z) Rev.3 Mar. 2002 Description
The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suita |  Hitachi | data |
HL6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HL601 | INFRARED EMITTING DIODES 赤外発光ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL601は、小型表面実装タイプのGaAlAs赤外発光ダイオードです。 The HL601 is a GaAlAs LED with a small and surface mount package.
HL601
特長 FEATURES
● 小型表面実装パッケージ 2.8(L)×1.4×0.9(H)mm Small  KODENSHI diode | | |
| 2 | HL602 | INFRARED EMITTING DIODE (GaAlAs) INFRARED EMITTING DIODE
HL602
H L602‚Í •A“§–¾ Ž÷Ž‰ ƒŒ ƒ“ƒY ‚ð ‘• ’… ‚µ ‚½850nm ”g’· ‚Ì G aA lA s •ÔŠO ”- Œõ ƒ_ƒC ƒI •[ ƒh‚Å‚· •BŽw Œü •« ‚ª ”ñ•í ‚É‹· ‚- •A‚©‚Â–Ê ŽÀ ‘• ƒpƒbƒP •  KODENSHI KOREA diode | | |
| 3 | HL615 | INFRARED EMITTING DIODES 赤外発光ダイオード INFRARED EMITTING DIODES(GaAlAs)
HL615
HL615は、樹脂レンズ付きの表面実装タイプのGaAlAs赤外発光ダイオードです。
HL615 is a surface mount type GaAlAs infrared emitting diode with resin lens.
特長 FEATURES
● 樹脂レンズ付きパッケ KODENSHI diode | | |
| 4 | HL6312G | (HL6312G / HL6313G) AlGaInP Laser Diodes
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of  Hitachi Semiconductor diode | | |
| 5 | HL6313G | (HL6312G / HL6313G) AlGaInP Laser Diodes
HL6312/13G
AlGaInP Laser Diodes
Description
The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of Hitachi Semiconductor diode | | |
| 6 | HL6314MG | AlGaInP Laser Diode
HL6314MG
AlGaInP Laser Diode
Description
The HL6314MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser poiters and optical equipment for amusement.
Application
• Laser pointer
Features
• • • � Hitachi Semiconductor diode | | |
| 7 | HL6323MG | AlGaInP Laser Diode HL6323MG
AlGaInP Laser Diode
ADE-208-1410 (Z) 1st Edition Mar. 2001 Description
The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensor Hitachi diode | |
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