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HJ13002 PDF Datasheet

The HJ13002 is NPN Epitaxial SilICon Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 HJ13002
NPN Epitaxial Silicon Transistor

H EFEI H EJ I N G ELECTRO N I CS CO . LTD H J 13002 N PN EPI TA X IA L SI LI CO N TRA N SI STO R A bs ol ut e M a xi m um Ra t i ngs ( Ta =25 ! ) Sym bo l Ra t i n g U ni t V CBO VCEO V EBO IC P C T j T st g 600 400 7 0. 75 15 150 - 55 ~ 15 0 V V V A W ! ! 1 2 3 10 B 20 C 30 E Cha r a c t e r i s t i c Col l e c t or - Ba s e V ol t a ge Col l e c t or

Hefei Hejing
Hefei Hejing
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Recommended search results related to HJ13002

Part No Description ( Function) Manufacturers PDF
13002AG   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Unisonic Technologies
Unisonic Technologies
datasheet pdf
13002AH   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers hig

Unisonic Technologies
Unisonic Technologies
datasheet pdf
3DD13002   NPN Transistors

SMD Type NPN Transistors 3DD13002 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Param

Kexin
Kexin
datasheet pdf
3DD13002   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.datasheet39.comom 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60

TRANSYS Electronics
TRANSYS Electronics
datasheet pdf
3DD13002   TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25℃) 2. COLLECTOR 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Co

Jiangsu Changjiang
Jiangsu Changjiang
datasheet pdf

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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