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Datasheet H11D1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | H11D1 | 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by H11D1/D
GlobalOptoisolator™
H11D1 * H11D2
[CTR = 20% Min] *Motorola Preferred Device
6-Pin DIP Optoisolators High Voltage Transistor Output (300 Volts)
The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optical |
 Motorola Inc |
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| 5 | H11D1 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is suppl |
 Fairchild Semiconductor |
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| 4 | H11D1 | Optocoupler H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
FEATURES
• CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation
A C NC 1 2 3 6 B 5 C 4 E
• Ve |
 Vishay Siliconix |
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| 3 | H11D1 | HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802
1.2
Dimensions in mm 2.54 7.0 6.0 1 2 3 6 5 4 |
 ISOCOM COMPONENTS |
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