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GTS9922E PDF Datasheet

The GTS9922E is N-channel Enhancement Mode Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/10/26 REVISED DATE :2007/01/25B GTS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 15m 6.8A The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *

GTM
GTM
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Recommended search results related to GTS9922E

Part No Description ( Function) Manufacturers PDF
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Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Co

IXYS Corporation
IXYS Corporation
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AP9922EO   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9922EO Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 20V 15mΩ 6.8A ▼ Optimal DC/DC battery application TSSOP-8 ID Description The

Advanced Power Electronics
Advanced Power Electronics
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APM9922K   Dual N-Channel Enhancement Mode MOSFET

APM9922K Dual N-Channel Enhancement Mode MOSFET Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS =4.5V RDS(ON) =34mΩ(typ.) @ VGS =2.5V Pin Description • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top V

Anpec Electronics Coropration
Anpec Electronics Coropration
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DMBT9922   PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 A C TOP VIEW B E D G H K J L M E B C

Diodes Incorporated
Diodes Incorporated
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DMDT9922   MATCHED PAIR SURFACE MOUNT TRANSISTOR

DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR Features ADVANCE INFORMATION · · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 B1 E1 Dim A B B C C1 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max

Diodes Incorporated
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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