No | Part number | Description ( Function ) | Manufacturers | |
1 | GIB10B60KD1 | IRGIB10B60KD1 PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperatur |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to GIB10B60KD1 |
Part No | Description ( Function) | Manufacturers | |
IRGIB10B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
International Rectifier |
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IRGIB10B60KD1P | INSULATED GATE BIPOLAR TRANSISTOR PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Character |
International Rectifier |
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IRGIB10B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR datasheet39.com PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse |
International Rectifier |
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ASI10601 | NPN SILICON RF POWER TRANSISTOR HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is Designed for PACKAGE STYLE .380 4L STUD FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATING |
Advanced Semiconductor |
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LBT10601 | SAW Filter China Electronics Technology Group Corporation No.26 Research Institute 106.8MHz SAW Filter 8.1MHz Bandwidth Part Number: LBT10601 www.sipatsaw.com SIPAT Co., Ltd. Specifications Parameter Center Frequency Insertion Loss 3 dB Bandwidth Unit MHz dB MHz MHz |
SIPAT |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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