Datasheet GA5210PL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	GA5210PL	CMOS process / Toaster Series Control IC 无锡思扬微电子科技有限公司多士炉系列控制 IC 数据手册 GA5210PL 芯片规格书（Ver 1.3）介绍概述 GA5210PL 采用 CMOS 工艺制造，是专为多士炉开发的高性价比专用集成电路； GA5210PL 对原有的 GA5210P 进行升级，Reheat 和	Siyang Microelectronics	cmos

GA5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	GA500TD60U	HALF-BRIDGE IGBT DUAL INT-A-PAK PD - 50048D GA500TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparal	International Rectifier	igbt
2	GA50JT06-258	Junction Transistor GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Compatible with 5 V TTL Gate Drive  Temperature Independent Switching Performanc	GeneSiC	transistor
3	GA50JT06-CAL	OFF Silicon Carbide Junction Transistor Die Datasheet GA50JT06-CAL Normally – OFF Silicon Carbide Junction Transistor Features • 210°C maximum operating temperature • Gate Oxide Free SiC switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacit	GeneSiC	transistor
4	GA50JT12-247	Normally - OFF Silicon Carbide Junction Transistor Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperatur	GeneSiC	transistor
5	GA50JT12-CAL	Junction Transistor Die Datasheet GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capaci	GeneSiC	transistor
6	GA50JT17-247	Junction Transistor Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperatur	GeneSiC	transistor
7	GA50JT17-CAL	Junction Transistor Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capaci	GeneSiC	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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