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Datasheet G4BC20KD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G4BC20KD | IRG4BC20KD
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides |  International Rectifier | data |
G4B Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G4B | GLASS PASSIVATED JUNCTION RECTIFIER G4A THRU G4J
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 600 Volts
*
Case Style G4
Forward Current - 3.0 Amperes
FEATURES
♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation at TA  General Semiconductor rectifier | | |
| 2 | G4BC20F | IRG4BC20F
PD - 91602A
IRG4BC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generati International Rectifier data | | |
| 3 | G4BC20FD | IRG4BC20FD www.datasheet4u.com
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution a International Rectifier data | | |
| 4 | G4BC20KD | IRG4BC20KD
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides International Rectifier data | | |
| 5 | G4BC20U | IRG4BC20U PD - 91448D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Gener International Rectifier data | | |
| 6 | G4BC20UD | IRG4BC20UD PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution a International Rectifier data | | |
| 7 | G4BC30FD | IRG4BC30FD PD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher e International Rectifier data | |
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