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Datasheet G40N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | G40N60A4 | HGTG40N60A4 HGTG40N60A4
Data Sheet August 2003 File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of |
 Fairchild Semiconductor |
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| 2 | G40N60C3 | HGTG40N60C3 HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a |
Fairchild Semiconductor |
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| 1 | G40N60UFD | FGA40N60UFD FGA40N60UFD
IGBT
FGA40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a |
Fairchild Semiconductor |
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