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G10N60A PDF Datasheet

The G10N60A is Fast Igbt In Npt-technology. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 G10N60A
Fast IGBT in NPT-technology

SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability

Infineon
Infineon
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DG10N60 N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET 版本号:V1.0 产品概述 General Description DG10N60是N沟道增强型场效应晶体管,应用了东光微电的相关专利技术,采用自对准平 面工艺及先进的终端耐压技�

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