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FCPF11N60F PDF Datasheet

The FCPF11N60F is 600V N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FCPF11N60F
600V N-Channel MOSFET

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Cosseff.=95pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, ne

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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Recommended search results related to FCPF11N60F

Part No Description ( Function) Manufacturers PDF
FCPF11N60   SuperFET MOSFET

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstandi

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FCPF11N60NT   N-Channel MOSFET

FCP11N60N / FCPF11N60NT N-Channel MOSFET FCP11N60N / FCPF11N60NT N-Channel MOSFET 600V, 10.8A, 0.299Ω Features • RDS(on) = 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A • Ultra Low Gate Charge ( Typ. Qg = 27.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • Ro

Fairchild Semiconductor
Fairchild Semiconductor
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FCPF11N60T   SuperFET

FCP11N60 / FCPF11N60 / FCPF11N60T SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and

Fairchild Semiconductor
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2SA1160   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
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2SA1160   Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet39.comom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
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