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FB31N20D PDF Datasheet

The FB31N20D is Irfb31n20d. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FB31N20D
IRFB31N20D

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characte

International Rectifier
International Rectifier
pdf

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Recommended search results related to FB31N20D

Part No Description ( Function) Manufacturers PDF
IRFB31N20   Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effe

International Rectifier
International Rectifier
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IRFB31N20D   Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effe

International Rectifier
International Rectifier
datasheet pdf
IRFB31N20DPBF   HEXFET Power MOSFET

PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Chara

International Rectifier
International Rectifier
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2N3120   Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0

Central
Central
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2SC3120   TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS)

2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur

Toshiba Semiconductor
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[1]    

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