No | Part number | Description ( Function ) | Manufacturers | |
1 | F84045 | CS4041 CHIP set w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
Chips |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to F840 |
Part No | Description ( Function) | Manufacturers | |
BF840 | NPN medium frequency transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF840 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 12 Philips Semiconductors Product specification NPN medium frequency transistor FEATURES • Low current (max. 25 m |
NXP Semiconductors |
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BF840 | NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) NPN Silicon RF Transistors BF 840 BF 841 q q q Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion Low output conductance Type BF 840 BF 841 Marking NC ND Ordering Code Q62702-F1240 Q62702-F1287 Pin Configuration 1 2 |
Siemens Semiconductor Group |
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CEF840A | N-Channel Enhancement Mode Field Effect Transistor CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID 8.5A 8.5A 8.5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). |
CET |
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CEF840G | N-Channel Enhancement Mode Field Effect Transistor CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840G CEB840G VDSS 500V 500V CEF840G 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High |
CET |
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CEF840L | N-Channel Enhancement Mode Field Effect Transistor CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 500V RDS(ON) 0.8Ω 0.8Ω 0.8Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High pow |
CET |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |