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Datasheet D669A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | D669A | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB649/A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SD669xG-x-AA3-R
- 2SD669xG-x-AB3- |
 Unisonic Technologies |
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| 4 | D669A | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity
APPLICATIONS ·For low-frequency |
 SavantIC |
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| 3 | D669A | NPN Type Plastic Encapsulate Transistors 2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation PCM : 1mW Tamb=25
Collector current ICM : 1.5 A
Collector-base voltage V(BR)CBO : 180 V
Collector-emitter vo |
 SeCoS |
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| 2 | D669A | NPN Transistor - 2SD669A 2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector |
 Hitachi Semiconductor |
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