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Datasheet C60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | C6000 | NPN Transistor - 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2SC6000
Unit: mm
• High DC current gain: hFE = 250 to 400 (IC = 2.5 A) • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) • High speed switching: tf = 13 ns (typ)
A |
 Toshiba Semiconductor |
 |
| 19 | C6010 | NPN Transistor - 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
2SC6010
Unit: mm
• High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
R |
 Toshiba |
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| 18 | C6011 | NPN Transistor - 2SC6011 2SC6011 Audio Amplification Transistor
Features and Benefits
▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V
versions available ▪ Complementary to 2SA2151 ▪ Recomm |
 Allegro |
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| 17 | C6012 | NPN Transistor - 2SC6012 Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • W |
 Panasonic Semiconductor |
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