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Datasheet C5586 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | C5502 | NPN Transistor - 2SC5502 Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
Package Dimensions
unit:mm 2161
[2SC5502]
0 |
 Sanyo |
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| 25 | C5505 | NPN Transistor - 2SC5505 Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitte |
 Panasonic |
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| 24 | C5508 | NPN Transistor - 2SC5508 PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA |
 NEC |
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| 23 | C5511 | NPN Transistor - 2SC5511 2SC5511
Transistors
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
2SC5511
zExternal dimensions (Unit : mm)
TO-220FN
10.0
zStructure NPN Silicon Epitaxial Planar Transistor
4.5
φ3.2
2.8
zFeatures 1) Electrical characteristics of DC current gain hFE is fla |
 ROHM Semiconductor |
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