No | Part number | Description ( Function ) | Manufacturers | |
1 | C5242 | NPN Transistor - 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 23 |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to C5242 |
Part No | Description ( Function) | Manufacturers | |
2SC5242 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute |
Toshiba Semiconductor |
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2SC5242 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5242 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W h |
SavantIC |
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2SC5242 | NPN Epitaxial Silicon Transistor 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=250V |
Fairchild Semiconductor |
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2STC5242 | High power NPN epitaxial planar bipolar transistor 2STC5242 High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz 3 2 1 Application ■ Audio power amplifier TO-3P Description This |
STMicroelectronics |
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KSC5242 | Audio Power Amplifier KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V (Min.) High Power Dissipation Wide S.O.A Complement to KSA1962 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolut |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |