No | Part number | Description ( Function ) | Manufacturers | |
6 | BUT11AF | POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUT11AF/D Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, h |
Motorola Inc |
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5 | BUT11AF | Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Pto |
NXP Semiconductors |
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4 | BUT11AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT11AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak valu |
Wing Shing Computer Components |
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3 | BUT11AF | High Voltage Power Switching Applications BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications 1 TO-220F 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current |
Fairchild Semiconductor |
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2 | BUT11AF | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT11F BUT11AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum |
SavantIC |
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1 | BUT11AF | High Voltage NPN Power Transistor ON Semiconductort FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. � |
ON Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |