No | Part number | Description ( Function ) | Manufacturers | |
315 | BTS100 | Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) Smart Highside Power Switch TEMPFET® Features q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage |
Siemens Semiconductor Group |
|
314 | BTS100 | Smart Highside Power Switch TEMPFET® BTS 100 Smart Highside Power Switch Features q q q q P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltag |
Infineon Technologies AG |
|
313 | BTS110 | TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-sour |
Siemens Semiconductor Group |
|
312 | BTS110 | TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-sourc |
Infineon Technologies AG |
|
311 | BTS110 | TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-sourc |
Infineon Technologies AG |
|
310 | BTS112 | TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) TEMPFET® BTS 112A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-so |
Siemens Semiconductor Group |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |