Datasheet BSS138 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BSS138	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 V(BR)DSS 50 V N-Channel 50-V(D-S) MOSFET RDS(on)MAX 3.5Ω@10V 6Ω@4.5V ID 220mA SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaib	JCET	mosfet
2	BSS138	N-CHANNEL MOSFET BSS138 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 输出电阻小、性能高；SOT-23 封装，利于设计安装。 Low RDS(on),rugged and reliable, compact industry standard S	BLUE ROCKET ELECTRONICS	mosfet
3	BSS138	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 PARTMARKING DETAIL 7 – SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and	Zetex Semiconductors	data
4	BSS138	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 138 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSS 138 Type BSS 138 BSS 138 Pin 2 S Marking SSs Pin 3 D VDS 50 V ID 0.22 A RDS(on) 3.5 Ω Package SOT-23 Ordering Code Q67000-S566 Q67000-S216 Tape and Reel	Siemens Semiconductor Group	transistor
5	BSS138	N-Channel Logic Level Enhancement Mode Field Effect Transistor May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resista	Fairchild Semiconductor	transistor

BSS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BSS100	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S2	Siemens Semiconductor Group	transistor
2	BSS100	N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces	Fairchild Semiconductor	transistor
3	BSS101	SIPMOS Small-Signal Transistor BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S493 Q62702-S636 Tape and Re	Siemens Semiconductor	transistor
4	BSS110	P-Channel Enhancement Mode Field Effect Transistor May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st	Fairchild Semiconductor	transistor
5	BSS110	SIPMOS Small-Signal Transistor BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67	Siemens Semiconductor	transistor
6	BSS110	P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product speciﬁcation P-channel enhancement mode vertical D-MOS transistor F	NXP Semiconductors	transistor
7	BSS119	SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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