Datasheet BSS123 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BSS123	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET V(BR)DSS 100 V RDS(on)MAX 6Ω@10V 10Ω@4.5V ID 0.17A FEATURE  Surface Mount Package  High Density Cell Design for Extremely Low RDS(ON)  Voltage Controlled Small Signal	JCET	mosfet
2	BSS123	N-CHANNEL MOSFET BSS123 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 极低的 RDS(ON)为高密度电池设计。 High density cell design for extremely low RDS(ON). 用途 / Applications 适用�	BLUE ROCKET ELECTRONICS	mosfet
3	BSS123	N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speciﬁcation N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct inter	NXP Semiconductors	transistor
4	BSS123	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL 7 – SA BSS123 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Peak Gate-Source Voltage	Zetex Semiconductors	data
5	BSS123	Small-Signal Transistor BSS 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Type BSS 123 Type BSS 123 BSS 123 VDS 100 V ID 0.17 A Ordering Code Q62702-S512 Q67000-S245 Pin 1 G Pin 2 S RDS(on) 6Ω Package SOT-23 Tape and Reel Information E6327 E643	Siemens Semiconductor Group	transistor

BSS Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BSS100	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D VDS 100 V ID 0.22 A RDS(on) 6Ω Package TO-92 Ordering Code Q62702-S499 Q62702-S007 Q62702-S2	Siemens Semiconductor Group	transistor
2	BSS100	N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces	Fairchild Semiconductor	transistor
3	BSS101	SIPMOS Small-Signal Transistor BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S493 Q62702-S636 Tape and Re	Siemens Semiconductor	transistor
4	BSS110	P-Channel Enhancement Mode Field Effect Transistor May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st	Fairchild Semiconductor	transistor
5	BSS110	SIPMOS Small-Signal Transistor BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D VDS -50 V ID -0.17 A RDS(on) 10 Ω Package TO-92 Ordering Code Q62702-S500 Q62702-S278 Q67	Siemens Semiconductor	transistor
6	BSS110	P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product speciﬁcation P-channel enhancement mode vertical D-MOS transistor F	NXP Semiconductors	transistor
7	BSS119	SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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