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Datasheet BF959 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF959 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BF959
TO-92 Plastic Package
BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwis |  CDIL | transistor |
| 2 | BF959 | VHF Transistor(NPN) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF959/D
VHF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER
BF959
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ |  Motorola Inc | transistor |
| 3 | BF959 | VHF Transistor(NPN Silicon)
BF959 VHF Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR 1 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BF959 A Y WW G = Device Code = Ass |  ON Semiconductor | transistor |
| 4 | BF959 | NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) NPN Silicon RF Transistor
q q q
BF 959
For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages For oscillator applications
Type BF 959
Marking –
Ordering Code Q62702-F640
Pin Configuration 1 2 3 C E B
Package1) TO-92
Maximum Ratings Parameter Collector-emi |  Siemens Semiconductor Group | transistor |
BF9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF900 | Sicherungshalter Type BF900 Sicherungshalter
IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen
Sicherungshalter f�  Inter Control data | | |
| 2 | BF901 | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation  NXP Semiconductors gate | | |
| 3 | BF901R | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
| 4 | BF9024SPD-M | P-Channel MOSFET and Schottky Diode BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
8
7
6
5
Features MOSFE  BYD mosfet | | |
| 5 | BF9028DND-A | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
D D DD 87 6 5
Features BYD mosfet | | |
| 6 | BF9028DND-GE | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z BYD mosfet | | |
| 7 | BF9028DNT | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. .
TSSOP-8
1 : drain1 2, BYD mosfet | |
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