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BB809 PDF Datasheet

The BB809 is Vhf Variable Capacitance Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 BB809
VHF variable capacitance diode

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB809 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode FEATURES • High linearity • Matched to 3% • Hermetically sealed leaded glass SOD68 (DO-34) package

Philipss
Philipss
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04980900ZXT   FUSE HOLDER

FUSIT Series: FH-04980900ZXT FUSE HOLDER FOR MIDI® /BF1 STYLE FUSE Dimensions Dimensions in mm (2) 3.81 M5 torque: 4-5Nm Description Use with BF1 /MIDI ® fuses up to 200A. Includes protective cover. Features interconnecting pins on side of fuse block for secure multiple blo

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0809LD120   120 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz

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0809LD30   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

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0809LD30P   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes

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