No | Part number | Description ( Function ) | Manufacturers | |
1 | B647 | PNP Transistor - 2SB647 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to B647 |
Part No | Description ( Function) | Manufacturers | |
2SB647 | Silicon PNP Epitaxial 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to em |
Hitachi Semiconductor |
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2SB647 | Silicon PNP Epitaxial To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
Renesas Technology |
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2SB647 | PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier. APPLICATION * Low frequency power amplifier ORDERI |
Unisonic Technologies |
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2SB647A | Silicon PNP Epitaxial 2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to em |
Hitachi Semiconductor |
|
2SB647A | Silicon PNP Epitaxial To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
Renesas Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |