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Datasheet AO4414L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | AO4410 | 30V N-Channel MOSFET AO4410
30V N-Channel MOSFET
General Description
The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion |
Alpha & Omega Semiconductors |
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10 | AO4411 | P-Channel Enhancement Mode Field Effect Transistor AO4411 P-Channel Enhancement Mode Field Effect Transistor
General Description
provide
Features
VDS (V) = -30V ID = -8 A (VGS = -10V) RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V)
The AO4411 uses advanced trench technology to excellent RDS(ON), and ultra-low low g |
Alpha & Omega Semiconductors |
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9 | AO4412 | N-Channel Enhancement Mode Field Effect Transistor AO4412 N-Channel Enhancement Mode Field Effect Transistor
General Description
provide
Features
VDS (V) = 30V ID = 8.5A (V GS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V)
The AO4412 uses advanced trench technology to excellent RDS(ON) and ultra low gate char |
Alpha & Omega Semiconductors |
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8 | AO4413 | P-Channel Enhancement Mode Field Effect Transistor June 2002
AO4413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
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Alpha & Omega Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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