No | Part number | Description ( Function ) | Manufacturers | |
145 | AM29DL800B | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
|
144 | AM29DL800BB120EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
|
143 | AM29DL800BB120ECB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
|
142 | AM29DL800BB120EE | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
|
141 | AM29DL800BB120EEB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
|
140 | AM29DL800BB120EI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-whil |
Advanced Micro Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |