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Datasheet 7N60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 7N60B | N-CHANNEL MOSFET 7N60(F,B,H)
7A mps,600 Volts N-CHANNEL MOSFET
FEATURE
7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N60
ITO-220AB 7N60F
TO-263 7N60B
TO-262 7N60H
Absolute Maximum Ratings(TC=25℃,u |
 CHONGQING PINGYANG |
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| 2 | 7N60B | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
7N60B
·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive |
 Inchange Semiconductor |
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| 1 | 7N60B | Hiperfast (tm) Igbt
HiPerFASTTM IGBT
IXGA 7N60B IXGP 7N60B
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2 V = 150 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90° |
 IXYS Corporation |
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