No | Part number | Description ( Function ) | Manufacturers | |
2 | 7MBR75U4B120 | Power Integrated Module SPECIFICATION Device Name : Power Integrated Module Type Name : 7MBR75U4B120 Spec. No. : MS6M 0855 Feb. 02 ’05 S.Miyashita Feb. 02 ’05 M.W atanabe Y.Seki K.Yamada MS6M0855 1 15 H04-004-07b Revised Records Date Classification Ind. Feb.-02 -’05 Enactment Content Applied date Drawn Checked Checked Approved Issued date M.W atanabe K.Yamada Y.Seki MS6M0855 |
Fuji Electric |
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1 | 7MBR75U4B120-50 | Power Devices (IGBT) 6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv/dt, excellent turn-on dic/dt |
ETC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |