No | Part number | Description ( Function ) | Manufacturers | |
1 | 60N60 | Ultra-low Vce(sat) Igbt Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clampe |
IXYS Corporation |
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Recommended search results related to 60N60 |
Part No | Description ( Function) | Manufacturers | |
160N60UFD | Ultrafast IGBT SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where hi |
Fairchild Semiconductor |
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APT60N60BCS | Super Junction MOSFET 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra L |
Advanced Power Technology |
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APT60N60BCSG | Super Junction MOSFET 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra L |
Advanced Power Technology |
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APT60N60SCS | Super Junction MOSFET 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra L |
Advanced Power Technology |
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APT60N60SCSG | Super Junction MOSFET 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra L |
Advanced Power Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |